激光照排技術(shù)光柵光閥設(shè)計和制作.pdf

1、浙江大學(xué)信息學(xué)院碩士學(xué)位論文激光照排技術(shù)光柵光閥設(shè)計和制作姓名：耿煜申請學(xué)位級別：碩士專業(yè)：光學(xué)工程指導(dǎo)教師：白劍20081101AbstractLasertypesetterusescomputertoeditthetypesetting，makingtheinformationofthebookbecomethelatticeinformationTheMEMS(Microelectro—mechanicalsystem)devic

2、eGLV(GratingLightValve)isintroducedtoactastheopticalmodulatorofthelasertypesetterAGLVismadeupofnumbersofunits，SOitiseasytofabricatelotsofpixelsusingthetechniqueofmicro—fabricationInaddition，theswitchingspeedoftheGLVisver

3、yfast，makingitpossibletoscanfastandincreasethespeedMoreover，thesubstrateofGLVisSiliconwhichcouldbearthebigintensityofthelaserusedinthelasertypesetterThisdissertationshowstheopticalandelectromechanicalprincipleofGLVandbas

4、edontheopticalprinciple，introducesthesimplifiedmodelofGLVTheprocessofmicro—fabricationisveryimportanttoGLVInordertosolvetheproblemsencounteredinthefabricationofGLVthisdissertationintroducestheprincipleofthinfilmandthepro

5、cessesofphotolithographyphotoresistandetchinganddiscussestheproblemsandmethodsforsolvingthemDuetothesmalllinewidthofGLVitisimportanttokeepthepatternandgoodadhesionofphotoresistByexperimentsandanalyticalanalysis，thisdisse

6、rtationputsforwardthemethodsforsolvingtheseproblemsThemainreasonofthephotoresistdeformationafterthephotoresiststopsflowistheshrinkageofphotoresistandshrinkagedifferencebetweentheedgeandnonedgeofthephotoresistinhardbake，w

7、hichiscausedbythehighexothermicityoftheresincuringprocessandthelowthermalconductivityofthephotoresistThetemperatureofnonedgeofthephotoresistishigherthanthatoftheedgeandalsohigherthanthebakingtemperatureThetemperaturedist

8、ributionismeasuredwiththeinfraredthermographyandsimulatedbyatwodimensionalsimulation，bothofwhichshowthatthesurfacedeformationishighlyrelatedtothephotoresistthicknessandbakingtemperatureExperimentsresultsdemonstratethatth

9、esurfacedeformationcanbeovercomebyproperbakingprocessThesourcesoftheinternalstressofthephotoresistcouldbetheshrinkageofphotoresistduringthecuringprocessandtheshrinkagedifferencebetweenthephotoresistandthesubstrateDuetoth

10、ehighexothermicityoftheresincuringprocess，thetemperatureofthephotoresistisnotuniform，whichcausestheshrinkagedifferenceinthephotoresistThemethodthatdelayaftersoftbakeandannealafterhardbakecouldpromotetheadhesionTheline—wi