0.35μmsigebicmos10gbs激光驅(qū)動(dòng)器電路設(shè)計(jì)_第1頁
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1、東南大學(xué)碩士學(xué)位論文0.35μmSiGeBiCMOS10Gbs激光驅(qū)動(dòng)器電路設(shè)計(jì)姓名：方大晟申請(qǐng)學(xué)位級(jí)別：碩士專業(yè)：電路與系統(tǒng)指導(dǎo)教師：馮軍20080101AbstractWiththegreatneedsforinformationexchangeaftertheworldentersthe21thcenturyITindustryandtelecommunicationnetworksdeveloprapidlyespecially

2、inOpticfihercommunicationsystemswhichbaseonthelightwaveandOptic—fiberandithasalreadybecomethemainpartoftheinformationsuperhighwayOpticfibercommunicationsystemsarcsuitableformanykindsofmulti—dataserviceforitsmeritssuchasg

3、reatcapacity、longtransmitdistance、economizingenergySource、antiinterferenceandantiradiationetcThus，itisveryimportanttodesignhighspeedintegratedcircuitsforopticaltransmissionsystemswithindependentpropertyAnopticaltransmiss

4、ionsystemincludestwoparts：thetransceivercircuitandthereceivercircuitThetransceivercircuitinthetransmitdirectionineludstwocriticalpartswhichmmultiplexercircuit(MUX)andthelaserdiodedriver(LDD)TheLDDisattheendofthetransceiv

5、ercircuitandisusedtopmvideenoughgaintomagnifyinputsignalfromtheMUXtodriverthediodetoshootBecauseitisthecriticalparttochangetheelectricalsignaltoligmSOitisoneofthehottopicsofresearchesThispaperintroducesthedesignofa10Gbif

6、fslaserdiodedrivercircuittobefabricatedin035pmSiGeBiCMOStechnologyfromJAZZThedifficultyofdesignfocusonhowtodecreasetheparasiticalcapacitanceoftheImgesizebipolartransistorattheoutputstagebecauseitaffectsthespeedofthecircu

7、itseriouslyAlSOthelargeoutputvoltageswingisagreatchallengetothebreakdownvoltage(BVceo)ofbipolartransistorHowtotradeofftheBVceoandtransitfreq(IT)isaproblemt0bewellconsideredEmployingstructureofinputbufferpreamplifierandou

8、tputstageconneclledtogetherandtheprcamplifierisbuildedbydifferentialamplifierandemitterfollowerdirectlyInductorpeakingisusedforbroadeningbandwidthinpreampliflerBesides，allsimplycurrentreferenceisappliedtosupplysteadycurr

9、entfordecreasingtheeffectofprocesscorocqrl3ThelaserdiodedrivergetsthebestperformancewiththesimulationsoftwareThepostsimulationshowthatthecircuitCanamplifytheinputsignalamplitudefromO6Vto35Vona50f1outputresistancealIOGb／s

10、withthetotalpowerconsumptionislessthan200roWThechipsizeisaboutO875mm065mmThecontinuingreductionoftheminimumfeaturesizeinICdevicesmakesthesecondordereffectseriouslyespeciallyChannellengthmodulationeffecthasalreadybeenonei

11、mportantfactorthatweshouldconsiderduringourcircitdesignThispaper引國nswithhowChannellengthmodulationeffectaffectsthecircuitmodelandanalysesitsprinciplealsodosomesimulationsusin901811mCMOStechnologyofTSMCandgivesafewmlesgui

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