3.1～3.4ghz120w功率放大模塊研制

1、西安電子科技大學(xué)碩士學(xué)位論文3.1～3.4GHz 120W功率放大模塊研制姓名：張鴻亮申請(qǐng)學(xué)位級(jí)別：碩士專業(yè)：電子與通信工程指導(dǎo)教師：張鶴鳴20100601Abstract Abstract Abstract Solid state amplifier modules have widely applications in communication and radar fields, As the important parts o

2、f electronic equipment, the modules have important meanings and effects to improve performance and reduce volume of electronic equipment. Based the module’s electronic parameters requirement, the system configuration an

3、d circuit were designed. A kind of S band power amplifier module was designed and manufactured successfully for engineering application in this paper, The testing results indicated that the design target was attained. Th

4、e performance and matching circuit of Si power transistor are the key factor of module. Si power transistor was designed and manufactured. The impedance parameters were obtained with load-pull testing method. The circuit

5、 of sing-transistor amplifier and twin-transistors synthesis amplifier were designed successfully using Microwave Office software according to the measured impedance parameters. The high-power amplifier module was develo

6、ped and manufactured successfully. It can delivers peak pulse output power of 120W with 8dB power gain and 36％ collector efficiency under the conditions of 36V operation, 300μs pulse width, 10% duty cycle in the frequenc

7、y band of 3.1～3.4GHz. The module can withstand the VSWR of 3:1 mismatch. The good microwave performance and reliability were represented. Key words: Module microwave power amplifier Silicon microwave power transistor