ba,0.5sr,0.5tio,3鐵電薄膜和ba,0.5sr,0.5tio,3la,0.67sr,0.33mno,3多鐵薄膜的制備和性質(zhì)研究

1、華中科技大學(xué)碩士學(xué)位論文BaSrTiO鐵電薄膜和BaSrTiO/ LaSrMnO多鐵薄膜的制備和性質(zhì)研究姓名：陳克兵申請學(xué)位級別：碩士專業(yè)：凝聚態(tài)物理指導(dǎo)教師：姚凱倫20090531華 中 科 技 大 學(xué) 碩 士 學(xué) 位 論 文 II Abstract In a certain range of temperature changes, the magnetoelectric material of both ferroelectric

2、 and magnetic, but also with ferroelectric and ferromagnetic coupling with a new-born effect-Magnetoelectric Effect, can be divided into single-phase magnetoelectric material and magnetoelectric composite materials. Magn

3、etoelectric composite materials in addition to single-phase with the magnetic material other than the advantages, arising from the magnetic coupling effect will be stronger, the application will be more extensive, so we

4、explore the pure phase of the ferroelectric material and the pure phase of the ferromagnetic material to prepare magnetoelectric composites. Barium titanate (BaTiO3) material is a typical ferroelectric material, in the S

5、r-doped BaTiO3 after it, and to adjust the ratio of Ba and Sr, we will get perovskite structure of BST ( Ba1-xSrxTiO3) ferroelectric material, it has better performance than the BaTiO3, and lanthanum strontium manganese

6、oxide (La1-xSrxMnO3) is also a perovskite structure and has a good magnetic. In this article we study the use of modified sol - gel prepared Ba0.5Sr0.5TiO3 (BST) ferroelectric thin films and by the pure phase of the ferr

7、oelectric thin films (BST) and the pure phase of the ferromagnetic thin films (La0.67Sr0.33MnO3) posed by the magnetoelectric composite films and studying the properties of structure , thickness , ferroelectricity, diele

8、ctric , leakage current-electric field and magnetic . This article is divided into four chapters, are as follows: (1) The use of sol - gel method on Si prepared in different annealing temperature of the BST films by XRD

9、 and FSEM, found film annealed at 550 ℃ temperature has been the crystallization, films’ surface is very smooth and uniform, grain With the annealing temperature up; (2) At the end of the LaNiO3/Si electrodes prepared in

10、 different annealing temperature of the BST films, and studied the FSEM, ferroelectric, dielectric properties and leakage current. Of which, 650 ℃ annealing temperature of the BST films under the 71.43 kV / cm field test