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1、南京航空航天大學(xué)碩士學(xué)位論文陶瓷基層合復(fù)合材料遲滯回線模擬和壽命預(yù)測(cè)姓名:許仁紅申請(qǐng)學(xué)位級(jí)別:碩士專業(yè):動(dòng)力機(jī)械及工程指導(dǎo)教師:宋迎東20080101陶瓷基層合復(fù)合材料遲滯回線模擬和壽命預(yù)測(cè) ii ABSTRACT Cross-ply ceramic matrix composite has the characteristics of high-temperature resistance, good friction propert

2、ies, high specific strength and other advantages, and overcome the shortcoming of the unidirectional ceramic composites which is low strength in off-axis direction. The researches on the damage mechanism of cross-ply cer

3、amic composites are the premise for its application to structural components, so it is important to model the hysteresis loops and predict life in cross-ply ceramic matrix composites. Stress-strain curve of cross-ply cer

4、amic matrix composites under quasi-static un-axial loading were modeled. The predominant modes of damage of the cross-ply laminates are transverse cracking of the 900 plies, matrix cracking of the 00 plies, interface de-

5、bonding and fiber failure. This thesis analyzed the stress distribution of cross-ply ceramic matrix composites under damage by laminate shear-lag theory, discussed the factors which influenced the stress distribution. Th

6、e tensile stress-strain curve was modeled by combining laminated shear-lag theory and failure criteria, and the influence of the factors on the stress-strain curve was discussed. The stress-strain curve predicted was com

7、pared with the experimental data from the references and the experiments of C/SiC cross-ply laminates. The results from the present analysis agreed well with the experimental data. The cross-ply hysteresis loops were mod

8、eled by combining laminated shear-lag theory and hysteresis theory, and the influence factors on hysteresis loop were discussed. The fiber failure statistics model combined with Evans interface wear model was used to pre

9、dict the S-N curve of ceramic matrix composites. The stress-strain curve under cyclic loading and the S-N curve predicted in this paper were compared with the experimental data from references and the tests of C/SiC cros

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