富磷條件下生長的InP單晶體材料特性研究.pdf

1、河北工業(yè)大學(xué)碩士學(xué)位論文富磷條件下生長的InP單晶體材料特性研究姓名：高海鳳申請學(xué)位級(jí)別：碩士專業(yè)：微電子學(xué)與固體電子學(xué)指導(dǎo)教師：楊瑞霞201103富磷條件下生長的InP單晶體材料特性研究iiSTUDYSTUDYSTUDYSTUDYONONONONTHETHETHETHEACTERISTICSACTERISTICSACTERISTICSACTERISTICSOFOFOFOFPRICHPRICHPRICHPRICHINPINPINPINP

2、SINGLESINGLESINGLESINGLECRYSTALCRYSTALCRYSTALCRYSTALABSTRACTABSTRACTABSTRACTABSTRACTInPcrystalhasalreadybecomeapromisingmaterialinthefieldsofmicroelectronicsoptoelectronicssinceitpossessesmanygoodfeatures.Semiinsulating(

3、SI)InPwithgoodactershasbeenwidelyusedtomanufacturehighfrequencyHEMTsHBTsOEICs.FedopingSIInPisgenerallyusedincommercialfieldatthepresenttimeSIInPcanalsobegotthroughannealingundopedInP.IthasbeenshownthatPrichInPcangetSIact

4、eristicmeeasilybyannealing.ButthepreparationofPrichInPisstillnotmatureuptonowtherearemanyimperfectionsonthewaferssuchassmallholesdislocationsdefectswhichaffecttheapplicationsofPrichInPseverely.TheacteristicsofPrichInPcry

5、stalwasstudiedbyPhotoluminescenceMapping(PL)XrayDiffraction(XRD)EnergyDispersiveSpectrometer(EDS)inthispaper.ThesampleusedwaspreparedbythemethodofPinjectioninsitusynthesisliquidencapsulatedCzochralski(LEC).PLMappingmeasu

6、rementsshowedthatthephotoluminescenceacteristicsofPrichInPwaferwasununifm.InthecenteredgeofthewaferthewavelengthofPLpeakwasshtertheintensityofPLpeakwasmuchlowertheFWHMofPLpeakwasmuchbiggercomparedtootherpartsofthewafer.T

7、heresultsrevealedthatthesepartsmighthavewsecrystallizationqualitymedefectssuchasVInPInPiVInH4.XRDmeasurementsshowedthattheedgeofthewaferwithmeholesonithadlargerlatticeconstantlargerdiffractionpeakFWHMcomparedtootherparts

8、.Sotheedgeofthewaferhadpocrystallizationquality.EDSmeasurementsshowedthatthedistributionofthecontentofPatomsInatomswasalsoununifm.OntheedgearoundtheholesofthewaferthecontentofPatomswasmuchhigher.Thepounifmityofthecontent