表面?zhèn)鲗?dǎo)型場發(fā)射顯示器的仿真與設(shè)計(jì).pdf

1、東南大學(xué)碩士學(xué)位論文表面?zhèn)鲗?dǎo)型場發(fā)射顯示器的仿真與設(shè)計(jì)姓名：孫亞軍申請(qǐng)學(xué)位級(jí)別：碩士專業(yè)：電子科學(xué)與技術(shù)；物理電子學(xué)指導(dǎo)教師：朱卓婭20120529AbstractAbstractThefieldemissiondisplay(FieldEmissionDisplayFED)withhighbrightnesswideviewingangle，highluminousefficiencyshortresponsetime，hasbeco

2、meoneofthehotspotsofthevacuummicro—nanoelectronicdevicesandnanomaterialsapplicationresearchThedesignofthenewfieldemissionstructureandstudyofnewfieldemissionmaterialSaretheimportantcontentofFEDtechnologyThisthesisfocuseso

3、nthetriodestructurefieldemissiondisplaybasedonfieldemissiontheorywiththeusingoffiniteelementanalysistechniques，hasamorein—depthsimulationandanalysisoftheemissioncharacteristicsofthesurfaceconductionfieldemissiondisplayan

4、doptimizesstructuralparametersofsurfaceconductionfieldemissionstructureOnthisbasis，studyemissioncharacteristicsofthecarbonnanotubes(CNT)andfourneedle1ikenanozincoxide(ZnO)hybridemissionmaterialsandprovidesanimportantrefe

5、rencetoachievelOW—costlargeareafieldemissiondisplayFirstlythisthesisintroducestheprogressoffieldemissionstructureandfieldemissionmaterialsinrecentyearsandelaboratesthefieldemissionmechanismSecondlywiththintroductionthefi

6、niteelementanalysismethodandbymeansofanalysisSORwareCOMSOLMULTIPHYSICSthesurfaceconductionfieldemissiondisplayweresimulatedbychangingthestructuralparametersandelectricalparametersofthesurfaceconductionfieldemissionstruct

7、uresuchasgatewidth，mediumaperturespacebetweencathodeandgatethethicknessofthediclectriclayerandthegatevoltagetoobtainthesurfaceconductionfieldemissiondisplaydifferentelectricfielddistributionUseMATLABandfourthorderRunge—K

8、uttaformulatocalculatetheelectrontrajectoryandtheemissioncurrentdensityofthedifferentstructuralparametersandelectricalparametersofthesurfaceconductionstructureComparetheseparametersandultimatelydeterminetheoptimalstructu

9、ralparametersandelectricalparametersofsurfaceconductionfieldemissiondisplayasfollows：gatewidthD=200LtmmediumapertureR=2009mthespacebetweencathodeandgated=1OOgmthedielectriclayerthicknessh=409mthegatevoltageV=350VFinally，

10、basedontheaboveoptimizationprogramofstructure，StimulateandanalyzeontheemissioncharaeteristicsoftheCNTemissionmaterialandthefourneedle1ikenanoZnOhybridmaterialsBycomparisonoftheemissioncurrentdensitythefieldenhancementfac

11、torofthehybridmaterialsiSmuchlargerthantheCNTemissionmaterialanditsweIrkfunctioniSfarlessthantheCNTemissionmaterialCurrentdensityofthehybridmaterialsiSmuch1argerthantheemissioncurrentdensityoftheCNTemissionmaterialThesim