a-Si：H TFT SPICE模型的研究.pdf

1、分類號UDC：Y930767密級：——編號：——aSi：HTFTSPICE模型的研究ResearchofSPICEModelforaSi：HTFT學位授予單位及代碼：蓬盤壟墨盤芏!!Q182專業(yè)名稱及代碼：叢生堂當固堡墊主堂fQ8Q2Q31研究方向：堂塹星垂墊盔叢墨鮭申請學位級別：王莖墅指導教師：益查墨蘭盤生奎捶盟塞亟答醉委員會i席：——量盔出生贊蜜墊叢生塹壟塹窒盟疊妻遺盟杰亟研究生：至豆塑論文評閱人：籃量生論文起止時間：2QQ3：!Q

2、：2Q始：12：型：盈絲AbstractTFT(ThinFilmTraIlsistor)is、videlyusedfordiSplaysThemainTFTisa_Si：HTFTwhichisswitchingdeviceofactivema打iXliquidcrystaldisplayWiththewideapplicationofaSj：HTFT，theestablishmentofitsmodelsbecomesavervimpo

3、rtantquestionforstudyAccuratea_Si：HTFTmodelsarerequiredforSPICEsimulatorsSevemlpapershavealreadybeenpublishedregardingmephvsicsandthemodelsofaSi：HTFT’but出evareinsu街cientfortoday’sad瑚cedLCDsimulationsThjsthesismainlvstudi

4、edSPICEmodelforaSi：HTFTwhichisapanofnational“863”project，“StudyofLargeSizea11dhi曲qual畸a—SiTFTOLEDtechnolOgy”TheanalysisaIldmodelsareapplicableto血esimulationoftoday’sopticaJcharacteriz“onsofFlat，PaIlelDisplavsIntllisthesi

5、sthenewmOdelsofa—Si：HTFTareestablishedforSPICE，onmebasisofinverted—s詛ggerstmctureaSi：HTFTofbackchallnelstoppedt)，pesC刪一v01tageandc印ac“a11cevoltagearealsotestedFromtllecapacitancecurve，theprocessparametersareex廿acted，such

6、asdopantconcentration，fixedchargedensjty，interfacestate，etcThispaperanalyzedlocalizedstate，subtllrcsh01dcurrent，ofrleakagecurrent，thefielde丘毫ctmobilit_Ir，biasandfrequencv—dependentcapacitance，themresh01dvonagechangewithv

7、oltagestressa11ddevicetemperature，etcThisnlesisfocusesontheestablishmentofnew捌ncun己ntmodelsintlle1inearregion，thesaturationregion，thefonvardaIldreversesub—mresholdregion，a11dnewofBleakagecurrentmodelsintheo行regiononbased

8、ofMOSFETmodelIIladditionⅡleprecisebiasand行equency—dependemMIScapacitancemodelsarcestablishedSomemodelpar鋤etersareextracted，suchasⅡ1rcsholdvoltage(VTo)，mobility(“0)etcSimulationresultsbyusingtllesemodelsaJldpar踟etersshowg

9、oodagreementbetweenmeasuredandsimulateddata1、hemodelsa∞applicabletotheaSi：HTFTdeviceswithdi虢remprocessstmcturesThemodelingprocedureisusefmtoTFTdesigIlers，Keywords：a—Si：HTFTSPlCEmodel，IVcharacterization，CVcharacterization