半導體二極管正向電特性的檢測.pdf

1、天津大學碩士學位論文半導體二極管正向電特性的檢測姓名：李樂申請學位級別：碩士專業(yè)：材料物理與化學指導教師：王存達20030101Inthisthesis，wedetailedlydiscussedthetraditionaImethodstocharacterizesemiconductordiodes，whichmainlyincludecurrent—voltage(tV)methodandcapacitancevoltage(Cv

2、)method，andputouremphasisoilanalysesofthelimitationofthesemethodsUnderparallelmodelandseriesmodelrespectivelyweanalyzedthecharacteristicsofsemiconductordiodewithACsignalatforwardbiasItispointedoutthattherealandimaginaryp

3、artsofthecharacteristicsofsemiconductordiodewithACsignalatforwardbiashaveverycloserelationandneedtobetestedandcalculatedtogetherWecomparedtheparallelandseriesmodel，showedtheadvantageanddisadvantageofdifferentmodelwithdis

4、similarconditionItisconfirmedthatchoosingthecorrectmodelCallpredigestcalculation，improvetheprecisionincalculation，andbehelpfulforfindingthephysicalmechanismaccordingtotheelectricalcharacteristicsAimingatthemethodswhichco

5、nsideridealfactornandseriesresistance‘a(chǎn)sconstants，wedefined6)andrAY)，andgavethemethodandexperimentdataWemeasuredtheapparentconductanceandapparentresistanceatdifferentfrequenciesunderapparelandseriesmodeltojudgewhetherthe

6、reisallinterraciallayerinsemiconductordiodeⅡthesecharacteristicschangewithfrequencyobviouslyaninteffaciallayerexistsinthediodeOtherwise，itdoesn’texistWhenobservingtheC11rveofcapacitancevoltage，wefoundstrongnegativecapaci

7、tancebothinSchottkyandP—ndiodesGenerallgthelowerisfrequencymoleobviousisnegativecapacitanceInaword，weputforwardanewmethodtomeasurethecharacteristicsofdiodesWiththismethodweGallaccuratelygetdetailedinformationabouttheseri

8、esresistance，junaioncapacitanceandotherparametersofdiodesandjudgewhetherthereisaninteffaciallayerinthediodesThemeasurementofSchottkyandP／1junctiondiodesofGaNprovedthatthismethodcouldimprovethemeasurementofsemiconductorde