低介電常數(shù)CN-,x-薄膜的制備研究.pdf

1、大連理工大學碩士學位論文低介電常數(shù)CN薄膜的制備研究姓名：張明明申請學位級別：碩士專業(yè)：凝聚態(tài)物理指導教師：徐軍20080601低介電常數(shù)CN。薄膜的制備研究StudyonthePreparationofLowDielectricConstantCNxFilmsAbstractTherapiddevelopmentofmicroelectronicdeviceswilllcadtothecontinuousimprovementofde

2、viceperformanceandtheincreaseofdeviceintegratedonachipInorderteducetheRCsigndelaydissipationandcross—talkbetweenmetalinterconnectscausedbysizeshrinkingcontinuouslypeoplearesearchingnewinterlinkagingmodetoreplacetheAI／SiO

3、，structure，thelOWdielectricconatant(10w—k)materialshavereceivedmorecloseattentionResearchesindicatethatCNxfilmisoneofprospectinglowkmaterials，whichcompletelymeetstherequirementsofintegratedcircuitinmechanicsperformancean

4、dchemicalstabilityWechooseptypedopingcrystalsiliconsubstrate，withhighpuritygraphiteforthetarget，hi曲一puritynitrogenandargongasforworkgasWepraparedCNxfilmsbymicrowaveelectroncyclotronresonanceplasmaenhancedunbalancemagneti

5、csputteringwithdifferentdepositionparametersWestudiedthechemicalcomposition，structure，dielectricpropertiesofthefilmsFouriertransforminfraredspectroscopyandX—rayphotoelectronspectroscopyhavebeenusedinordertoanalyzethechem

6、icalstructureandpropertiesoffilms，thedielectricconstantandbreakdownfieldweremeasuredbyC—V，I—VtechniqueswithAI／CNx／Si(metalinsulatesemiconductor)multilayerstructureIn0111“experiment，wehavechangedtheCtargetsputteringpowert

7、odepositdifferentfilmsTheresultsshowedthatthemainbondingstructuresbetweenNandCinthefilmswereC=NandCNbonds，andtheN／CatomicconcentrationratiodecreasedwimincreasingsputteringpowerThedielectricconstantofthefilmsmeasuredwitha

8、CVanalyzerwastypicallyatthevaluel(~24whichismuchsmallerthanthatoftheconventionalSi02layers(k～4)Thebreakdownfieldofthefilmsmeasuredwitha1VanalyzerWastypically04MV／cm，whichiSsmallerthantheide：alnumberKeyWords：lowdielectric