納米加工機(jī)理、納米結(jié)構(gòu)實(shí)現(xiàn)及表面檢測(cè)實(shí)驗(yàn)研究.pdf

1、天津大學(xué)碩士學(xué)位論文納米加工機(jī)理、納米結(jié)構(gòu)實(shí)現(xiàn)及表面檢測(cè)實(shí)驗(yàn)研究姓名：吳輝申請(qǐng)學(xué)位級(jí)別：碩士專業(yè)：機(jī)械制造及其自動(dòng)化指導(dǎo)教師：林濱20041201ABSTRACTThefinalaimofnanotechnologyistofabricatespecifiedfunctionalproductsonthenanometerscaleButtheconventionaltheoriescarl’texplainthephenomenaof

2、nanomachining，soitisexigenttoinvestigatemechanismofnanomachiningAtpresent，moleculardynamics(MD)simulationtechniqueandScanningProbeMicroscope(SPM)techniqueareemployedwidelytoinvestigatemechanismofnanomachiningandnanofabri

3、catingBaseonthemoleculardynamicstheoryandintegratedwitllcuttingtechniquemoleculardynamicssimulationmodelofcuttingbetweendiamondtoolandsingle—crystalsiliconworkpieceisbuiltinnanometerscaleinthispaper；softwareisprogrammed；

4、simulatingisrunandresultsareobserved；mechanismofmaterialremovalandsurfacegenerationareanalyzedSomeconclusionscanbeobtained：，silicon，thebrittleandhardmaterial，isremovedfromworkpieceinductile—modeinnanometercutting，andthec

5、uttingprocessisalsodepictedaccordingtocrystallatticedeforming；materialismoreeasytoberemovedwjtllmoresharpt001volumechangeofworkpieee，comparingthevolumeofmachinedsilicon、Ⅳimanmachinedsilicon，isascribedtophasetransformatio

6、nofsiliconcrystalFurthermore，somenanofabrieatingexperimentsonsinglecrystalsiliconspecimenarecarriedoatwithSPMAndthemathematicmodelofthedistributionoftheelectricfieldbetweenthetipandthespecimenduringthefabricatingprocessi

7、sestablishedThemechanismofgeneratingnanometerscalestructureisproposedascomplexelectro—chemicalreactionintheelectricfield，andsomeinfluencingfactorsareexplainedMeasuringformicrotopographyoffinishedsurfacewithSPMisoperateda

8、tlast，andqualityoffinishedsurfaceisevaluatedinallphases，AdvantageofthistechniqueistestifiedinmeasuringfieldKeywords：nanomachining，moleculardynamicsimulation，single—crystalsilicon，ScanningProbeMicroscope(SPM)，measuringfor