analytical current noise model based on nanoscale mosfet

1、<p>　　Analytical current noise model based on nanoscale MOSFET</p><p>　　Abstract. In this paper， a physical understanding of excess noise component associated with transport mechanism in nanoscale MOSFE

2、T is developed. Based on the current flow image， current noise models valid for both uncorrelated and correlated carrier injection are derived. The variation of suppression-factors with source-drain voltage， gate voltage

3、， temperature and source-drain doping are investigated. The results we obtained with considering the combination of the two effects are consistent wit</p><p>　　Key words： Nanoscale MOSFETs， Current Noise， Fa

4、no. </p><p>　　While the drain thermal noise of long channel MOSFET agrees with the van der Ziel model[1]， considerably larger excess noise has been observed in MOSFET with channel lengths of deep sub-micron

5、which severely hinder the applications of RF CMOS. Since the channel length of MOSFET continues to downscaling， it becomes an urgent need to address the issue of noise reduction. A clear understanding and accurate predic

6、tion of this excess noise play an integral role in realization of optimal noise behavio</p><p>　　However， it is still an argument about the component of excess noise. Many researchers have pointed out that s

7、hort channel effects[2-6] such as the hot electron effect， channel length modulation （CLM）， carrier heating and velocity saturation （mobility degradation） would lead to excess noise. Together with experimental measuremen

8、ts， they developed all kinds of analytical thermal noise correctional models based on the above short channel effects. Although the thermal noise correctional models can </p><p>　　Thermal noise model can be

9、used to describe the noise in long channel drift diffusive MOSFET[10] and shot noise model can predict the noise in ballistic MOSFET[11]. But for MOSFET whose transport mechanism is between drift diffusive and ballistic，

10、 i.e. quasi-ballistic MOSFET， there is still not an effective model to calculate the current noise[8]. In this paper， we analysis the component of excess noise based on the current flow transport image and derive a noise

11、 model which is valid in nanoscal</p><p>　　In this paper， we build the current noise model of quasi-ballistic nanoscale MOSFET， considering Fermi effect and Coulomb interaction， this conclusion coincides wit

12、h current results. The correctional model is more accuracy and can be used for noise suppression analysis. </p><p>　　Acknowledgement </p><p>　　This research was financially supported by Scientif

13、ic Research Fund of Shaanxi Provincial Education Department（Grant No. 2013K1115） ，the National Natural Science Foundation of China （Grant No. 61106062），the Fundamental Research Funds for the Central Universities （Grant N

14、o. K50511050007），and the Fundamental Research Funds for AnKang University （Grant No. AYQDZR201206） </p><p>　　References </p><p>　　[1] A.Van der Ziel， and E.R. Chenette， Noise in Solid State Devi

15、ces， Advances in Electronics and Electron Physics， vol.46， pp. 313-383， 1978. </p><p>　　[2] Klein P， An analytical thermal noise model of deep submicron MOSFET's， Electron Device Letters， vol.20， pp.399-

16、401，1999 </p><p>　　[3] G. Knoblinger， P. Klein， and M. Tiebout， A new model for thermal channel noise of deep-submicron MOSFETs and its application in RF-CMOS design， Solid-State Circuits，vol.36， pp.831-837，

17、 2001 </p><p>　　[4] C. Chen， M.J. Deen ，and Y. Cheng， Extraction of the induced gate noise， channel noise， and their correlation in submicron MOSFETs from RF noise measurements， Electron Devices， vol.48， pp.

18、2884-2892， 2002 </p><p>　　[5] K. Han， H. Shin， and K .Lee ， Analytical drain thermal noise current model valid for deep submicron MOSFETs， Electron Devices， vol.51， pp.261-269， 2004 </p><p>　　[6

19、] A.S. Roy， and C.C. Enz， Compact modeling of thermal noise in the MOS transistor ，Electron Devices， vol.52， pp.611-614， 2005 </p><p>　　[7] V. M. Mahajan，R. P. Jindal，and H. Shichijo， Electron Devices and Se

20、miconductor Technology. 　　[8] R. Navid，C. Jungemann，T. Lee，High-frequency noise in nanoscale metal oxide semiconductor field effect transistors， Journal of Applied Physics， vol.101， pp.124501-124501-8， 2009 </p>

21、<p>　　[9] J. Jeon， J. Lee， and J. Kim， The first observation of shot noise characteristics in 10-nm scale MOSFETs ，VLSI Technology， pp. 48-49， 2009. </p><p>　　[10] G. D. J. Smit， A. J. Scholten and R. M

22、. T. Pijper， Experimental Demonstration and Modeling of Excess RF Noise in Sub-100-nm CMOS Technologies， Electron Device Letters， vol.31， pp. 884-886， 2010. </p><p>　　[11] X. Oriols， E. Fernāndez-Díaz，

23、and A. Alvarez， An electron injection model for time-dependent simulators of nanoscale devices with electron confinement： Application to the comparison of the intrinsic noise of 3D， 2D and 1D ballistic transistors， Solid

24、-State Electronics， vol.51， pp. 306-319， 2010. </p><p>　　[12] D. H. Tang， L. Du， and T. L. Wang， Qualitative Analysis of Excess Noise in Nanoscale MOSFET， Chinese Journal of Physics， vol.60， pp. 107201-12701

25、-5， 2011. </p><p>　　[13] X. F. Jia， D. H. Tang， and L. Du， Research on Shot Noise Suppression in Quasi-Ballistic Transport Nano-MOSFETs， Chinese Journal of Physics， vol.61， pp. 127202-127202-8， 2012.</p&g