As2S8非晶態(tài)半導(dǎo)體薄膜波導(dǎo)的光學(xué)性質(zhì)研究.pdf

1、南昌大學(xué)碩士學(xué)位論文As2S8非晶態(tài)半導(dǎo)體薄膜波導(dǎo)的光學(xué)性質(zhì)研究姓名：林合山申請學(xué)位級(jí)別：碩士專業(yè)：光學(xué)工程指導(dǎo)教師：鄒林兒20110610AbstractABSTRACTChalcongenidesemiconductorglassisoneofthebestpotentialmaterialsofall。opticalswitching，ithasawidefieldofapplicationsinoptoelectronieint

2、egrateddevicessuchasinfraredelectroopticmodulatora11opticaldevicesofopticalcommunicationbandandSOon，foritslargenonlinearrefractiveindexwideinfraredtransmissionwindowandgoodglassformingabilityThisarticlestudiestheopticalp

3、ropertiesofAs2S$amorphoussemiconductorthinfilmwaveguideuponlightirradiationandannealing，mainlyforthechangesofitsrefractveindexandthicknessThispaperfocusesontheexoperimentalstudyofthechangesofrefractiveindexandthicknessof

4、theAs2SsamorphoussemiconductorthinfilmwaveguideuponprocessesoflightirradiationandanealingWeobservetheeffectofrefractiveindexincreaseofAs2S8amorphoussemiconductorthinfilmirradiatedbyUVlightTherefractiveindexincreaseverget

5、osaturationpoint謝ththeirradiationtimeincrease，andreachsaturationpointafter70minutesOntheotherhand，theannealingprocessisusedtostudytherefractiveindexincreaseeffectofasdepositedAs2Ssfilm，therefractiveindexincreaseinducedby

6、annealingofAs2Ssfilmisfoundsignificantwhentheannealingtemperatureexceeds160℃Also，weobservethatthethicknessofAs2S8filmdecreasesduringUVlightirradiationandannealingTheamountofthedecreaseofthicknesscausedbyirradiationofAs2S

7、8filmtendsnottochange，whilethethicknessdecreasecausedbyannealingisfoundmoreapparentwhentheannealingtemperaturereaches160“CInaddition，therefractiveindexoftheAs2S8filmofirradiationsaturationstateiSobservedtobenearlyinvaria

8、ntwhentheannealingtemperatureisbelow160。C，whileitisapparentlydecreasingwhenthetemperatureishigherthan160。CThatistosaytherefractiveindexofAs2S8filmisreversiblewiththeCO—actionofirradiationandannealingInadditiontherefracti