鈦酸鍶鋇和氧化鈰薄膜的制備及物理性能表征.pdf

1、河北大學碩士學位論文鈦酸鍶鋇和氧化鈰薄膜的制備及物理性能表征姓名：代鵬超申請學位級別：碩士專業(yè)：微電子學與固體電子學指導教師：劉保亭；劉保亭201106AbstractIIAbstractEpitaxialCeO2thinfilms10~40nmthickweredepositedonSi(111)substratesbythepulsedlaserdepositionmethod.Themetaloxidesemiconduct(MO

2、S)structureswerefurtherfabricatedtoevaluatetheinterfacedielectricpropertiesofCeO2films.TheresultsshowthattheCVacteristicscanbegreatlyaffectedbytheinterfaceges.TheepitaxialCeO2thinfilmswhicharedepositedbyatwostepprocessha

3、velargerdieleltricconstantlowerinterfacetrapdensity.ThepermittivitycalculatedfromtheEOTTphysacteristicscurveisabout37theinterfacetrapdensityisabout1012derofmagnitudeaccdingtotheHillColemanmethod.Ba0.6Sr0.4TiO3(BST)thinfi

4、lmwasdepositedonCeO2Si(111)substratebythepulsedlaserdepositionmethodCeO2bufferlayerwasusedtoimprovethecrystalqualityofthefilms.TheimpactoftemperatureunderdifferentoxygenpressureonthemicrostructureofBSTfilmsisinvestigated

5、.ItisfoundthattheBSTarehighlypreferredat750℃thedepositionpressureof1.0Pa.Themetalferroelectricinsulatsemiconduct(MFIS)structureswerefurtherfabricatedtoevaluatethedielectricpropertiesofthefilmsthememywindowis0.8Vat5Vbiasv

6、oltage.Theleakagecurrentdensitymeasuredatthevoltageof10Vis8.5107Acm2.PtLa0.5Sr0.5CoO3BSTLa0.5Sr0.5CoO3CeO2Si(PtLSCOBSTLSCOCeO2Si)capacitswerefabricatedonSi(111)substratesusingRFmagronsputteringpulsedlaserdepositionmethod

7、s.ItisfoundthatBSTthinfilmsarepolycrystallinethemaximumdielectricconstanttunabilityofBSTthinfilmsare49322%respectively.TheLeakagecurrentdensityoftheLSCOBSTLSCOcapacitis8.7106Acm2atthevoltageof5V.PtNiTiBa0.6Sr0.4TiO3NiTiP

8、tPtBa0.6Sr0.4TiO3PtcapacitswerefabricatedonPtTiO2SiO2Si(001)substratesusingRFmagronsputteringpulsedlaserdepositionmethods.ItisfoundthatthemicrostructureofBSTthinfilmdidnotchangeobviouslyafterintroducingtheamphousNiTibarr