采用in-film結(jié)構(gòu)刻蝕阻擋層進(jìn)行雙鑲嵌刻蝕工藝的研究.pdf

1、目錄—^2Abstract3第一章引言41.1鍵41.2鑲嵌刻蝕成型丨：藝介紹51.3當(dāng)前應(yīng)用比較廣泛的鑲嵌刻蝕成型：丨：藝介紹71.4采用infilm結(jié)構(gòu)刻蝕阻擋層進(jìn)行雙鑲嵌刻蝕成型工藝的特點(diǎn)和本論文的研究意義101.5本論文的內(nèi)容安排11第二章Via刻蝕成型工藝的研究132.1弓潔132.2Via刻蝕成型」:藝的特點(diǎn)和難點(diǎn)132.3Via刻蝕解決思路和方法142.4實(shí)驗(yàn)及結(jié)果分析152.5安全丄藝窗口的定義182.6總結(jié)25第三章光

2、刻膠回刻工藝的研究273.1引言273.2光刻膠冋刻I:藝的特點(diǎn)和難點(diǎn)273.3光刻膠|1刻I:藝解決思路和方法273.4實(shí)驗(yàn)及結(jié)果分析293.5總結(jié)31第四章Trench亥丨J蝕工藝的研究324.1弓唁324.2Trench刻蝕工藝的特點(diǎn)和難點(diǎn)324.3Trench刻蝕解決思路和方法334.4實(shí)驗(yàn)及結(jié)果分析354.5工藝窗口設(shè)計(jì)定義414.6總結(jié)46第五章全文總結(jié)47參考文獻(xiàn)49SCW50AbstractWiththecontinuo

3、usdevelopmentoftheIC(IntegratedCircuit)technologycopperinterconnecthasreplacedthealuminuminterconnect.Differentfromaluminumcoppercannotreactwithetchinggastoproducevolatilebyproduct.Thencopperdameneprocesswasdevelopedincl

4、udingsingledamenedualdameneprocessthelatterismewidelyemployed.Thisthesisstudiesthedualdameneetchingprocessbasedontheapplicationofinfilmetchingstoplayerincludingthreeimptantsections.Viaetchingprocess:Photoresistisusedasth

5、emaskinviaetchingprocess.Themostimptantpointinthissectionisthatviaprofilemustbewellcontrolled.Fadeepvia(1.7um)，nostriationisallowedatthetopofvia.Aslightbowingprofilecouldbeacceptablebutneedtobewellcontrolled.Viabottompro

6、filemustbevertical(87)etchneedstostoponbottomNDClayer.Photoresistetchback(PREB)process:Afterviaetchingprocessisfinishedalayerofphotoresistwillbecoatedonwafer.Bothwafersurfaceviawillbefilledwithphotoresist.Thedifficultyof

7、PREBstepistopreciselycontroltheamountsoftheremainingphotoresistwithinvia.Trenchetchingprocess:Thissectionisthemostdifficultone.Bothoxidefilm(Si〇2)PRwillbeetchedduringtrenchetchingprocess.Theetchingselectivitymustbewellde

8、signedi.e.thetopofPRpluginviamustbelowerthantheinfilmstoplayerofSiN.AfterSi〇2etchingstopsonSiN，PRstripbegins.AllthePRonwafersurfacewithinviamustbefullystripped.ThelaststepistoetchbottomNDCDARCSiNinthemeanwhile.Theetching

9、selectivitybetweenSiNSi〇2PRofeachstepmustbewellcontrolled.ThemostimptantachievementofthisstudyisthatVia，PREBTrenchetchingprocessrecipeaswellastheverylargeprocesswindowhasbeenobtainedallowingthesmoothdevelopmentof55nmtech