高頻SAW器件高性能壓電薄膜的制備及性能研究.pdf

1、分類號：密數(shù)：天津理工大學(xué)研究生畢業(yè)論文高頻SAW器件高性能壓電薄膜的制備及性能研究(申請碩士學(xué)位)專業(yè)：光學(xué)工程研究方向：光電信息薄膜材料研究生：王芳指導(dǎo)教師：楊保和教授2005年1月AbstractAstheprocesSinginfomlmionamountofmodernelectronicsincreasesrapidlySurfaceacousticwave(SAW)devicesmustmovetohigherfreque

2、ncybandSurfaceacousticwave(SAW)filterisoneofthekeyelemen拓inmodemwirelessmobile—communicationsystemThecentraloperatingfrequencyofSAWfilter(f)isdefinedasf=V／L，amongwhichVmeanstheSAWpropagatingspeedoftheusedmaterial，andList

3、heperiodofitsinterdigitaltransducer(IDT)Atpresent，itisdifficultforSAWdevicesoperatingunderGHzfrequencybecauseofthelimitationofmaterialsandfabricationtechnologyDiamondisonematerialwithveryhighacousticpropagatingspeed，ands

4、oitispossibletofabricatehighfrequency(GHz)SAWdevicesusingpiezoelectricfilmsoildiamondsubstratesbasedonthepresenttechnologyNowadaysithasattractedmoreattentionsnotonlyforinstitutebutalsoforindustrytofabricatehighfrequency(

5、GHz)SAWdevicesusingdiamondsubstratesInthisthesiszincoxide(ZnO)thinfilmsweredepositedondifferemsubstrates(suchassiliconanddiamond)byradiofrequency(RF)magnetronsputtering，andthestructureandpropertiesofthefilmswereanalyzeda

6、ndcharacterized碲x—raydiffraction(XRD)，scanningelectronmicroscopy(SEM)，atomicforcemicroscopy(AFM)inordertodeterminetheircr37stalstructure，surfacemorphologyandcompositiondistributionThemaindepositiontechnologyofZnOthinfilm

7、swasdetailedlydiscussedAndthemainresultscanbedescribedasfollowing：First，thedepositionofZnOfilmsonSisubstrateswasinvestigatedInwhictrtheeffectsofsputteringtemperature，spuUeringpressure，sputteringpower，proportionofoxygenan

8、dargonandannealingtemperatureonmicrostructureandelectricityperformanceofZnOthinfilmsweredetailedlydiscussed，andthedepositionconditionsofZnOthinfilmswereoptimizedUndertheoptimizeddepositionparmneters，thehighlyc—axisorient

9、edZnOthinfilmswithlowersurfaceroughhess(RMS：2038nm)andhighresistivity(107ncm)havebeenfabricatedSecondZnOfilmsweredepositedondiamondsubstrateandtheeffectsofthemaindepositionparametersoilthinfilmswerediscussedExperimentalr

10、esultsshowthatundertheoptimizedconditionhighlyc—axisorientedZnOthinfilmswithlowersurfaceroue女a(chǎn)ness(RMS：12nm)andhighresistivity(above101ncm)havebeenfabricatedThecentraloperatingfrequencyofSAWfilterbyZnO／Diamond／Siis25GHzI

11、naword，basedonaseriesofresearchtheeffectofthedepositionparametersonmicrostructureandelectricityperformanceofZnOthinfilmswerediscussed，andundertheoptimizedconditionhighlypropertyZnOfilmshavebeenfabricatedwhichprovidethepo

12、ssibilityandfundamentthinfilmsforthefabricationofhighfrequencysurfaceacousticwavedevicebasedonthestructure(Si02／ZnO／IDT／diarnond)KeyWordstSAWFmagne仃onspuuefing，Zincoxide，LithiumNiobatepiezoelectricityfilmspreferredorient