微波單片寬帶放大器設計研究.pdf

1、電子科技大學碩士學位論文微波單片寬帶放大器設計研究姓名：李媛媛申請學位級別：碩士專業(yè)：電磁場與微波技術指導教師：楊顯清20090501ABSTRACTABSTRACTThispapermainlyintroducesthedesignofMonolithicMicrowaveIntegratedCircuit咖C)widebandamplifierTheprinciplesandthedesignofthecircuitsaregive

2、nTheevolvedhistoryandtheadvantagesofMMICarcintroducedfirstlyThenthestructurecharacteristicofPHEMTsmallsignalandlargesignalmodelparameterextractionmethodforPHEMTmodelarepresentedinthepaperThepaperemphasisonthedesignofbroa

3、dbandampliferbasedonthedesignindex，thematchingcircuits，biasandstabili鑼circuitsaswellastopologystructurearealldesigndSimulationandoptimizationofthecircuitsareundertheAgilentADSsoftwareA6^20GI／zbroadbandMMICmediumpowerampl

4、ifierbasedon025／MmpowerPHEMTprocessisdesigndTheamplifierhastwostages，thefirststagePHEMT、析mgatewidthof4x35／tmWasusedtodrivethesecondPHEMTwithgatewidthof4x70／tmWithasingle5voltDCpowersupplyeachstageworksatclassAoperationfo

5、roptimalpoweroutputwitllminimaldistortionThetwostagefeedbackamplifierhasI8O02dBsmallsignalgainwitll37dBtypicalnoisefigureandinputandoutputVSWRsarelessthan17over6～20GHzTheoutputpoweratldBgaincompressionaremorethan185dBm，t

6、hedesigningsimulationresultsindicatethatthismethodissimpleandfeasibleA35^7GHzbroadbandMMIClownoiseamplifierbasedon025pmlownoisePHEMTprocessisdesigndWealsoadopttwo—stageworkingmethod，having3voltDCpowersupplyItachievesanoi

7、sefactoroflessthan18dB，againofmorethan155dBwithflatnessoflessthan士05dB，inputandoutputVSWRsarelessthan17acrossthebandTheresultsshowthatitachievestherequirementofdesignobjectiveKeyWords：MMIC，PHEMTwideband，poweramplifierlow