金屬硅化物遮蔽層應用深紫外曝光的技術(shù)實現(xiàn).pdf

1、S546S5梗旦大學碩士學位論文(專業(yè)學位)學校代碼i】0246學號：043021158金屬硅化物遮蔽層應用深紫外曝光的技術(shù)實現(xiàn)院系(所)：信息科學弓工程學院專姓業(yè)：電子與通信工程名：侯大維指導教師：於偉峰剮教授完成日期：2006年5月21臼Abstract：ThepaperdescribeSalicideBlock(SAB)processeffectinadvancesemiconductorprocessOnthetechnolog

2、yof018umnodeorbelow018umnode，theSABprocesswindowareminorornottheoptimizeconditionduetorelatedprocessmachine1imitInthiS，wewilldiSCUSStheSABprocessloop1imitiSsueoncurrentprocessflowandhowtosolveitandimprovetheSABloopproces

3、swindowTheprocessflowmodificationistheleastchangingonitafterthediscussionofthefeasibilityEitherthesideeffectfromtheflowchangingorthechangingpossibilityformassproductwillbethemostefficientandeasiestThereare]otsofexperimen

4、tsincludingfullloopprocessproductionexperimentThemodificationmethodiSfeasibleaftertheproofofthetheoryandexperimentsItcanbeappliedonmassproductiondirectlywithhighvalueontheproductionKeyWords：CVD(ChemicalVaporDeposition)，C