化學(xué)浴沉積低溫制備ZnO薄膜的研究.pdf

1、分類號(hào)#04841題單位代碼：學(xué)號(hào)：密級(jí)：誓89057010005S200309014克北京工業(yè)大學(xué)碩士學(xué)位論文英文并列sTU】DYoFznonI肌SPREPAI也DBYcHEMIAL題研究生姓名：王基擅專業(yè)：撾攔毖壁皇氈堂研究方向：迸直篷腿導(dǎo)師：芒齷職稱：熬援處理職稱：班盔西宜塑職稱：副班窯雖論文提交日期：2鯉E壘且學(xué)位授予日期：授予單位名稱和地址：韭基王些盍堂jE基直捆田區(qū)堊垂國l鯉蘭ABSTRACTZno，mlichhashexa

2、gonal刪te姍cturc，isaⅡ一Ⅵs鋤iconductormaterial稍n1稍如band—gapZnO血in611n8arewidelyappliedillmanyfiddsf醯meirex翻lent磚ysic畦prope難eshth主sPap％zno吐矗玨丘hswaspr印棚edatlowte薹np咖ebya10wc0跨e醪yhandled，l矗rge—area’鼬viro姍ent丘i鋤dlysyIl如esismelllo

3、d—Ch鋤icalB劬D印osi舶n(CBD)Micms咖ctI】r髂，surfacemomh010百es蛆dpfop釀主esoftheznO鑫lIn、柑℃ch啪ctcrizedNow，孫Ofilnlspr印ar缸byCBDalwayshadapoofcaxisori酬at主onandnuclca60nduetothelowtem拼敷曲reandmi鋤atchbe慚eenthefilnlsand吼Ibstra把sInnlispap％t1

4、1rDu曲tllestIldiesoffactorsn饋esyn彘esis，ZnO岔mwasa拉ainedwithgOOd—Ori吼tatio瑪cryst址娃zadon掘ldv主s遜leHght也msparencyilllow搬nperg№resF碰hermorc，elec錳icfieldwasapplied如CBDtechmqueforⅡlefirst岫ehl錳ler鼯earchofdi娥鵬ntpar鋤曲ersinpr印aration

5、ofZnO矗lms，地ee牖ct3of吐dating嗍eIItsonthep唧ara垃onOfznobyCBDw髓cdis娜sed弧釩也eprep缸ationofZnOfilnls慚thdi脅眥subs姐teplacingma觸eranddifferentbufI宅rswerealsos伽ied姐dconcllldedindd協(xié)i1AccordiIIgtolheresul協(xié)of)@D，SEM，UVXPS躚dPL，itisndicat聰也

6、at豇O董量bspfep棚、糠戧lNH3H208schela顫greagenthasb甜ercrysta_llin時(shí)趾dmore砌formandcompansurfa∞t11anmeomer柳ocheIatingrcagents；F衄meres試協(xié)comparingtlledi婦hent幽鰳哦eplacingm鞠ncfdemo芏ls撕扯cdmatwb姐subs螗出墨were蠢?？穘go鑫sol越ons，氆e蔬O蠡蛔spreparedh髂

7、ahi曲ercaxis喊鉍tation；ZnO丘hsprel)砌試thZnObu丘hpreparedwitllspllner如gh懿圭lighercori踟tation姐dbett盯crystallilli夠The慨Spa艘1ceofZnO蠡hns、】l，i豺婦vis遺lel主出li蟠tisaboVe8∞鑫粥ac硝fedThem越nmechanismisdiscllssedbasedontlleaboverI刪tsin血istextTo

8、iⅡlprovenlenucleationof豇O矗Imson西勰spr印aredbycBD，clecmcfieldw雒蠡rsta雕主藤證cBDm曲砸。D掛e幻齜poor18撼ce矗smat馥betweenz娃0印，stalsaIldglass，t11enudeationofZnOisver)r1iIni把dWh讎nleelec乜ic6ddwasapplied，廿lerc鯽1tsshowed吐mtthenudeationofZnOfil