電子輻照直拉硅單晶中空位相關缺陷的紅外吸收光譜研究.pdf

1、河北工業(yè)大學碩士學位論文電子輻照直拉硅單晶中空位相關缺陷的紅外吸收光譜研究姓名：薛晶晶申請學位級別：碩士專業(yè)：材料物理與化學指導教師：李養(yǎng)賢；劉彩池；陳貴鋒201103電子輻照直拉硅中空位相關缺陷的紅外光譜分析iiIRIRIRIRABSPTIONABSPTIONABSPTIONABSPTIONSPECTRUMSPECTRUMSPECTRUMSPECTRUMSTUDIESSTUDIESSTUDIESSTUDIESOFOFOFOFVnOmV

2、nOmVnOmVnOmININININELECTRONIRRADIATEDELECTRONIRRADIATEDELECTRONIRRADIATEDELECTRONIRRADIATEDCZSiCZSiCZSiCZSiABSTRACTABSTRACTABSTRACTABSTRACTTheinterstitial(I)vacancy(V)weregeneratedinelectronirradiationsilicon.Theyinterac

3、tofotherdefectssiliconatomscanproduceVOVO2othervacancyoxygendefects.Itisthemostimptantissueftheeffectofelectronirradiationthecontrolofdefectsinsilicon.InthispapertheconversionoftheVnOminsiliconthepositionoftheIRpeakinlow

4、ermeasurementtemperaturewereinvestigatedwithFourierTransfmInfraredAbsptionSpectrometer(FTIR).IRacteristicsofirradiationdefectstheinteractionwithoxygeninsiliconwerediscussedtheconcentrationofVOcompleteswascalculated.Exper

5、imentalresultsshowedthattheintensityofVOisrelatedtotheannealingtemperature.TheintensityofVOatthemaximumwhentheannealingat300℃disappearedatabout450℃.Uponannealing300℃VOdefectsbecomemobileleadingtothedecayof830cm1theparall

6、elgrowthof889cm1(VO2).ButthediffusioncoefficientofVOismuchhigherthanthatofOialsothatthecaptureradiusfthereactionbetweenVOsisexpectedtobelargerthanthatbetweenVOOi.ThusthereactionVVOOVVOVO→→222isexpectedtobepreferabletothe

7、reaction2VOOVOi→.TheconcentrationofVOwasproptionalto()mdosenotrelatedtotheconcentrationofinitialoxygeninthiscase.TheconcentrationofvacancythatinducedbyirradiationisaconstantleadingtotheconcentrationofVOisaconstantatthesa

8、meradiationdose.VOVO2absptionpeakshiftedtohigherfrequencyinlowermeasurementtemperaturetheintensityincreasewiththedecreasesofmeasurementtemperature.KEYKEYKEYKEYWDSWDSWDSWDS：CZsiliconelectronirradiationvacancyrelativedefec