HgI-,2-半導(dǎo)體探測器器件的制備與研究.pdf

1、上海大學碩士學位論文HgI半導(dǎo)體探測器器件的制備與研究姓名：李瑩申請學位級別：碩士專業(yè)：微電子學與固體電子學指導(dǎo)教師：史偉民20030201——壘!塑里AbstractItismaterialandthefabricationprocessofdevicesthatmainlydeterminethepropertiesofHgl2detectorFirstlythepaperdiscusseshowtoobtainhighpurity

2、，high’resistanceandhigh—qualityHgl2crystalThenthepaperpresentsaninvestigationofthefabricationprocessofHgl2detectorTheinvestigationfocusontheeffectsofsurfacetreatment，surfaceagingandelectrodepreparationrelatedwiththedevic

3、epropertiesInordertoobtainhigh—purityandoptimumstoichiometryHgl2singlecrystal，wesynthesismercuriciodidebetweenhighpuritymercury(H曲andiodinebyvaporphaseinthreetemperaturezone，Thensublimatepurificationprocesshasbeendoneaft

4、erthesynthesisofHgl2AIlastaHgl2singlecrystalisgrownusingthemethodofthreetemperaturelocalizedpointnucleusThetestandresultanalysisbytheuseofXRD，Ramanspectra，UltravioletVisibleandFTIRshowthattheHgl2singlecrystalhasmetthereq

5、uirementofsemiconductordetectorsThepaperworksovertherelationbetweenthetechnicalprocessincludingsurfacetreatment，surfaceagingandelectrodepreparationanddevicepropertiesbytheuseofSEM，XPS，andAFMandMicroamperemeterItshowsthat

6、thesurfaceconditionofHgl2crystalwillbeimprovedwhenthetemperatureofKIsolutionissetat0Capproximatelytheconcentrateat15％andthecorrosionperiodataround2minutes，afteretching，exposedintheairfor24hoursbeforeelectrodecontactedwhi

7、chcanbeusedthematerialsofAu，Cr，Cu，SnandCAtroomtemperature，theFWHMofthe”Fesourceat59Kevpeakis11KeyandO9KevtothepulseKeywords：mercuriciodide；synthesisofmercuriciodide；sublimatepurification；vaporgrowthofcrystal；device；surfa