0.5微米掩模制造曝光及顯影工藝改進(jìn)

1、蘇州大學(xué)碩士學(xué)位論文0.5微米掩模制造曝光及顯影工藝改進(jìn)姓名：胡廣榮申請(qǐng)學(xué)位級(jí)別：碩士專(zhuān)業(yè)：電子與通信工程指導(dǎo)教師：李文石20071101英文摘要05MicronMaskExposureandDevelopingProcessImprovementAbstractThecurrentcompanyhasalreadytheequipmentsthatarecapableofproducing05micronmask。Butduetoth

2、ebottleneckofprocesstechnicalleveltheproductionlineisonlyabletofabricatemaskal08micronWiththetrendofsizedecreaseforsemiconductordevices，theproductiondemand。tou∞05micron(andbelow)maskbecomesmoreandmorehighConsideringthese

3、factors，itsplannedandaimedtoimprovethemaskproductioncapabilityFirstlybasedontheissuestatisticsdonefor懿i“gproductionprocess，thetwotypesofprimaryproblemsthatblockprocessimprovementareidentifiedOnetypeisthepatterndeformatio

4、nandtheotherissizenonconformityThenanalysisisdonetofindtherootcausc5ofthemajorproblemsTheanalysisreportshowsthatthewaystosolvetheproblemsaretocorrectOpticalProximityEffectandoptimizedevelopingprocessConsequentlydetailedm

5、ethodstoCOITe；ctdefectsarespecifiedThemethodtocorrectdefectslikesbulge，contactingandrecessionisfineexposuredosecontr01Thedetailedwaystocorrectsizenonconformitydefect哦tooptimizebakingparameterreduceexposureimpacttodevelop

6、erdecreasethetimeslotduringexposureanddeveloperincreasethestabilityofdevelopertemperatureandoptimizecompositionofdeveloperTovalidateeffectivenessoftheabovemethods，allofthemareputtotrialrunsforverificationThetrialrunsa塢se

7、paratedintotwobattle5叩to6setsand71piecesofmasksTheresultgotfromthetrialnl地showthatthemethodsforprocessimprovementa托workingandtheprocesstechnicallevelisliRedllpfrom08micronto05micronKeywords：Mask／Reticle，Exposure，opticaJ1