多孔硅的發(fā)光性能研究.pdf

1、刃798833碩士研究生學(xué)位論文新疆大學(xué)論文題目(中文)：多孔硅的發(fā)光性能研究論文題目(外文)：ThePhotoluminescenceCharacterizationofPorousSilicon研究生姓名：張玉娟學(xué)科、專業(yè)：光學(xué)學(xué)位類別：理學(xué)碩士研究方向：硅基光學(xué)器件導(dǎo)師姓名職稱：賈振紅教授論文答辯日期2007年‘月3日學(xué)位授予日期年月日ABSTRACTThesinglecrystalSiisanundirectedbandgaps

2、emiconductoranditsenergygapisl_1levAstheluminescentmaterialattheapplicationinphotoelectricfieldsinglecrystalSiis1imitedSince1990intensevisiblephotoluminescenceofporoussiliconwasfoundbytheEnglishscientistCanhamforthefirst

3、timeandexplainedbyquantumconfinementefect，poroussiliconhavebeenattractedmanyscientistsattentionintheworldButafteradecade，therearemany●importantproblemsthosestillexistnow，suchaslowefficiencies，strongdegradationoflightemit

4、tingThispaperisdividedintofivepartsInordertofindthemethodsofincreasingtheintensityofphotoluminescenceofporoussilieon，theinfluencesofdopingZn2一ions，sputteringtinandinsertingPANIonphotoluminescencepropertiesofPSaremainlyin

5、troducedZn“ionsaredopedintosingle—crystallinesiliconmakinguseofquickdiffusionmethodFluorescencephotospeetrometerisusedtoanalyzetheDhotoluminescencepropertiesofthesampleswhicharefabricatedbyanodeelectrochemicaletchingandt

6、heresultsshowthatthephotoluminescence(PL)spectrafromPSmembranesareenhancedandtheemissionpeakinphotoluminescencespectraisbroadenedseriouslyduetothedopingofZn”However，theZn2dopingcouldn’tchangethepeakpositionMoreover，thesu