Ge-SiO-,2-薄膜的光致發(fā)光和電致發(fā)光及其機理研究.pdf

1、蘇州大學(xué)碩士學(xué)位論文GeSiO薄膜的光致發(fā)光和電致發(fā)光及其機理研究姓名：董業(yè)民申請學(xué)位級別：碩士專業(yè)：凝聚態(tài)物理指導(dǎo)教師：姚偉國吳雪梅2001.4.1tAbstractInthiSdissertation，thepropertiesofphotoluminescence(PL)andelectr01uminescence(EL)fromGe—SiO，thinfiimsandmechanismsof1ightemiSSionhavebee

2、nstudiedGe—Si0。thinfilmsweredepositedonSisubstratesbyradiofrequencymagnetronsputteringtechniqueWithaGe—Si02compositetargetFilmswereannealedinN。ambiencefor30minatdifferenttemperatureThemicrostuctureoffiimswerecharacterize

3、dbyseveralanalysiStechniques，suchasXRD，TEM，F(xiàn)TIR，XPSandSOonWhenannealedattemperaturehigherthan600℃，Genanocrystals(nc—Ge)appearedinfiimsAndtheyincreasedfrom39to61nmwiththeincreaseofannealingtemperaturefrom600℃to1000℃Underu

4、ltrayioletexcitation，a11samplesemitastrongvioletbandcenteredat394nmWiththeformationofnc—Ge，thesamplesexhihitanotheremissionoforangebandwiththepeakat580nmanditSintensityincreaseswiththeincreasingSizeofnc—GeAnalyticalresul

5、tsindicatethatthevioletbandcomesfromGeOdefectandtheorangebandoriginatesmainlyfromtheluminescencecentersattheinterfacebetweenthenc—GeandSi0。matriXELdeviceswerefabricatedbasedon20一nmthicknessGe—SiO，filmsandtheirstructuresa

6、reAu／Ge—Si02／p—SiandAu／Ge—Si02／n—SiForcomparison，Au／Si—SiO／p—SiStructureswerealSOmadeForAu／GeSiO／p—SiandAu／Si—Si02／p—Sistructures，theyemitELpeakedat5lOnmwhenforwardbiasesweregreaterthan6Vand65V，respectively，whilenodetect

7、able1ightemissioncanbeobservedunderreversebiasButforAu／GeSiO，／n—Sistructure，ELcanbeobtainedonlyunderreversebiasTheELiSstableandreproducibleandcanbeseenbynakedeyeTheresultssuggestthatthegenerationofcarriersresultfrombipol

8、arinjectionandimpactionizationbyhotelectronsforELunderforwardandreversebias，respectivelYA1thoughtheprogressesofcarrier’sgenerationaredifferentforthesetWOkindsofEL，therecombinationofcarriersiSmainlyvialuminescencecentersi