PI-SiO-,2-電子結(jié)構(gòu)和擊穿機理研究.pdf

1、國內(nèi)圖書分類號：TM21592工學(xué)碩士學(xué)位論文V^993613PI／Si02電子結(jié)構(gòu)和擊穿機理研究碩士研究生：導(dǎo)師：申請學(xué)位級別：學(xué)科、專業(yè)：所在單位：答辯日期：授予學(xué)位單位：梅金碩殷景華工學(xué)碩士材料物理與化學(xué)應(yīng)用科學(xué)學(xué)院2006年3月哈爾濱理工大學(xué)竺量簍矍三奎蘭三莖竺耋莖竺竺圣TheResearchofElectronicStructureandBreakdownMechanismofPI／Si02AbstractAsakindoff

2、unetionaImaterialPIhasexcellentdieleetricityandgoodmechanicalpropertyetcunderhightemperature，andithasbeenappliedinthefieldsofspacefightandmicroelectroniesPIhybridedbynallo—particlesisthehotspotofrecentresearchanditscoron

3、aresistancelireiS500timesmorethanPI’S，andithasbeenappliedwidelyinthefrequencycontroltechnologysystemsButthebreakdownmechanismandthenano—particles’SfunctionsintheprocessofbreakdownareunknownThegeometricalandelectronicstru

4、ctureofPIandPFSi02aresimulatedusingMS30Thesimulationresultsindicatethatthegeometricalstructuresofmiddle行agmemofPI(n=2，3，4)areconsistentandusingstmctureofmiddlefragmentofIOWpolymertodescribethestructureofhigIlpolymeriSfea

5、sibleThebondordersamongatomsofPIaregainedbyMullikenmethod，andthebondorderofC(7)O(8)isstronger，thebondordersofO(I)C(2)，C(5)一N(6)，N(6)一C(7)andC(7)一C(9)areinferiortoothersNanoparticlesofSi02foITllthehydrogenbondwithearbonyl

6、ofPI，whichchangesthegeometricalandelectronicstructureofPIbutthebondorderchangesalittleThefilmsofPI／Si02andPI，whichproducedbyourselves，aremadetobreakdownunderhighelectricfieldandthesurfacedefeatureoffilmsandthemicrostruct

7、ureoftheshotholearestudiedusingSEMThetestingresultsshowtllatthebreakdownfieldstrengthofPI／Si02andPIareI958KV／ramand18182KV／mmrespectivelyandnanohybridizationimprovestheelectricityresistancecharacterofthePIfilmThefilmofP[

8、／Si02iSdestroyedontheedgeoftheshothole；thereareaIotofsmallholesanddischargetraceneartheshotholeAndalargerangeofthesurfaceneartheshotholeofPIisprotuberantandthebadlydestroyedfiledspreadsabout1001tinfarawayfromtheshothole1