基于rfid芯片應(yīng)用的0.13μm高密度mim電容制造工藝研究

1、上海交通大學(xué)碩士學(xué)位論文基于RFID芯片應(yīng)用的0.13μm高密度MIM電容制造工藝研究姓名：張平申請學(xué)位級別：碩士專業(yè)：軟件工程指導(dǎo)教師：程秀蘭;陸鋒200812183STUDY ON 13ΜM HIGH DENSITY MIM CAPACITOR MANUFACTORY PROCESS FOR RFID CHIP APPLICATION ABSTRACT RFID product is widely applied consist w

2、ith the semiconductor technology development. But with the RFID chip critical CD scaling down, the manufactory process of RFID chip’s MIM capacitor because the key point .So, this paper choose 0.13μm high density MIM cap

3、acitor manufactory process study for RFID chip application as a topic to start experiment. The experiment mainly focus on the several MIM insulator material study, then combine the capacitor structure design to find the

4、optimize MIM capacitor manufactory process for RFID chip application. And all electric character satisfied the RFID chip request. The experiment result showed: First, SiN and SiO2, for their low K character, only 2fF/?m

5、2 density MIM cap can be achieved, But the structure show good electric character on leakage, BVD, Tcc, Vcc; Second, Use high K Al2O3 and SiO2 combine film can achieve high density MIM cap, But Tcc and Vcc performance ne

6、ed further improve; Last, form design view, a stack MIM structure was applied with low K SiN/ SiO2 film as dielectric can get 4fF/?m2 high density MIM cap device, and all electric character meet the RFID chip request. Ke