6H-SiC上3C-SiC緩沖層及SiCGe薄膜的生長.pdf

1、西安理工大學(xué)碩士學(xué)位論文6HSiC上3CSiC緩沖層及SiCGe薄膜的生長姓名：李青民申請學(xué)位級別：碩士專業(yè)：微電子學(xué)與固體電子學(xué)指導(dǎo)教師：陳治明林濤20080301AbstractTitle：GROWTHOF3CSiCBUFFERANDSiCGeFILMON6H—SiCMajor：MicroelectronicsandSolidstateElectronicsName：LiQingminSupervisor：ProfChenZhimi

2、ngDrLinTaoAbstract(Signature)(Signature)(Signature)It’SvaluableforSiCGefilmgrownon6HSiCsubstrateasthismaymakeitsensitivetovisibleandnearinfraredlightbyaccommodatingitsbandgaptomakenewoptoelectronicapplicationsforSiCbased

3、devicesHowever，therearemanydifficultiesinmaterialgrowingIt’SimportanttooptimizeprocessconditionandimprovethequalityofthefilmbasedontherighttestingandanalyzingInthisthesis，3C—SiCbufferandSiCGefilmswereheteroepitaxiallygro

4、wnonSiCsubstratesinahotwallchemicalvapordeposition(HWCVD)system，andthegrowthprocessesandthematerialcharacteristicsofthemwerepresentedThemainresultsinthisthesisareasf01lows：1Theeffectsofgassourceflowratesandgrowthtemperat

5、ureon3C—SiCwereresearchedinthispaper3C—SiCfilmwithgoodqualitywasgrowninthehotwallCVDsystembytheimprovinginthegrowthparameters，andthesamplewastestedbySEM，AFM，TEM，andXPSAnoptimumgrowthconditionthatthetemperaturewas1250℃，th

6、epressurewas480Pa，andtheflowrateratiowas2000：l0：4SCCMforH2：Sill4：C3H8wasobtainedForthe3C—SiCfilmgrowninthiscondition，thesample’Ssurfacewassmooth，anditwasgrowninlayerbylayermode；thesubstrateandepi—layerwerewell—arranged6H

7、—SiCstructureand3C—SiCstructure，separately，withasmoothtransitionandnopolytypeinthejunction2Theimpactofthegassourceflow—rateratioandgrowthtemperatureontheSiCGefilmswereinvestigatedAtagrowthtemperatureof1250℃andaflowratera