0.16μmdram中次大氣壓硼磷硅玻璃工藝的優(yōu)化研究

1、復(fù)旦大學(xué)碩士學(xué)位論文0.16μmDRAM另次大氣壓硼磷硅玻璃工藝的優(yōu)化研究姓名：張苗申請(qǐng)學(xué)位級(jí)別：碩士專業(yè)：電子與通信工程指導(dǎo)教師：鄭國祥；龔大偉20090320復(fù)旦大學(xué)工程碩士學(xué)位論文AbstractWiththecontinuousdevelopmentofdynamicrandomaccessmemory(DRAM)，thedimensionofthedeviceisscalingdownfastThiSbroughtnewcha

2、llengestosemiconductormanufacturingBorophosphosilicateglass(BPSG)depositedbyatmosphericpressurechemicalvapordeposition(APCVD)andplasmaenhancedchemicalvapordeposition(PECVD)cannotmeetthemanufacturingrequirementsofdeepsub—

3、micronnodeWiththeexcellentperformancesub—atmosphericpressureboronphosphorussiliconglass(SABPSG)hasbeenwidelyappliedintheDRAMsemiconductormanufacturingof016llmandbelowtechniquenodeThispaperdiscussesaseriesofSABPSGprocessp

4、roblemssuchashighparticle，poorprocessstabilityandpoorfilmqualityin016umDRAMdevelopmentTheimprovementschemesarealsocarriedoutincludingequipmentrenovation，processwindowenhancementandoptimizationTeduceas——depositionparticle

5、inBPSGfilmequipmentrenovationisdiscussedTheparticlequantityissharplyreducedthroughreforminggaspipelines，addingedgeringandreducingslitvalvespressureAndthecrystaldefectinducedbyexposingtheBPSGfilminthemoistureairisalsodisc

6、ussedAchemicalmechanismisproposedtoexplainthemechanismProcessstabilityisenhancedbyoptimizethecombinationofreactantgasflowWiththecomputeraidedDOEtechnologyaccurateregressionequationisfitouttocharacterisetheeffectsofgasflo

7、wonconcentrationanddepositionrateThevoidlocatedinbitlinestructureiseliminatedbyoptimizingthecarrygasanddopingconcentrationofBPSGAtthessJnetimethedensityanduniformityofBPSGfilmisenhancedTheimprovementschemesinthispaperhav