晶邊硅剝落致0.18微米系統(tǒng)級芯片低良率的研究

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45、 s e db y0 ．1 8 u mS O Cl o wy i e l di S t h es i l i c o np e e l i n gf r o me i g h t0 ’c l o c ka t w a f e re d g e ．A f t e rt h eo b s e r v a t i o no f al a r g e n u m b e ro f w a f e re d g e ，f i n d t w o

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49、 Rc l e a n i n gp r o c e s sa n d o p t i m i z a t i o nb a c k s i d ew e te t c hp a r a m e t e r s ，f o u n d t h es e c o n d f a i l u r em o d e l i S t h em a i n c a u s e so f S i p e e l i n g ．F o r0 ．1 8

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51、 r t i c l e s o n w a f e rs u r f a c e ，a f t e r t h et e m p o r a r y s o l u t i o n ，m a i np e e l i n gh a s b e e nr e m o v e d ，b u t n o t e li m i h a t et h ed e f e c t s o u r c e ．I no r d e rt oe f f

52、e c t i v e l ys o l v et h ep r o b l e m o fs i l i c o n p e e l i n g ，t h i St h e s i Sp u t f o r w a r dt o s k i p t h eS A Bb a c k s i d ew e t e t c h ，e l i m i n a t e st h ed a m a g eo fS i 0 2 a t w a f

53、e re d g e ，i n t h eS I N d r y e t c h ，w a f e re d g e s i l i c o n n o t s u f f e rd a m a g eb e c a u s eo ft h e S i 0 2 a sas t o p l a y e r ．T h i Sm e t h o di m p r o v e st h e w a f e re d g ec o n d i t

54、 i o n s ，t h o r o u g h l ys o l v e st h ep r o b l e mo fw a f e re d g eS i p e e l i n g ．A f t e r u s i n g t h e n e w t e c h n o l o g y ，i n c r e a s et h ea v e r a g ey i e l d 1 0 ％，c o m p l e t e l ys o