深亞微米NMOSFET柵電流二維分布建模.pdf

1、上海交通大學(xué)碩士學(xué)位論文深亞微米NMOSFET柵電流二維分布建模姓名：王明宇申請學(xué)位級別：碩士專業(yè)：微電子學(xué)與固體電子學(xué)指導(dǎo)教師：湯玉生2001.12.1摘要上海交通大學(xué)研究生學(xué)位論文MoDELlNGFoRGATEC1丁ItRENT2DDISTRIBUTl0NSOFTHEDEEPSUBMICRoNNMoSFETABSTRACTAftertheICindustrywasdevelopedintotheageofdeepsubmicron，

2、thehotcarriersreliabilityevaluationofMOSdeviceshasbeenoneoftheprerequisiteassessesofnewICprocessing，newtypedevice’SstructuredevelopingandwillbecometheprojectrulescheckitemofICdesignsForthispurpose，wemustputupthephysicald

3、istributionmodelabouthot—carriersreliabilityandthenwecandescribethesituationofhot—carriersmovingaccuratelyAtpresent，themostdistributionmodelsoftheneededgatecurrentintheMOSdevicereliabilitymodelinghaveusedahighlysimplifyi

4、ngmodel，whichonlycontainsoneexponentialtermThemodelhaslostalotofinformationproducedbymanybiasparameters，thoughthedamagemodelCanobtaingoodconsistencythroughharmonizingtheexperimentresultsThepaperisbasedontheanalyticalmode

5、lofhorizontalandvertical2DelectricfieldDuringtheprocessofmodelingfortheelectricfield，weconsiderthehorizontalcomponentandverticalcomponenthavemodulatingeffecteachotherandthenobtaintheanalyticalmodelofelectricfield，thisist

6、hecreationinthepaperbutdistributionmodelsofelectricfieldinexistenceareonlypseudo—two—dimensionaldistributionmodelingforelectricfield，theyconsiderthehorizontalandverticalcomponentsofelectricfieldisindependentcomparatively

7、withoutconsideringthemodulatingeffectMeanwhileweuseofGalaSStheoremandbuildtwoGaussboxesnearthedrainjunctiontoobtaintheanalyticalmodelofhorizontalcomponentofelectricfield，otherwise，forthemodelofverticalelectricfield，weade

8、。ptthemethodofharmonizingtheresultsofnumericalvalueanalyzingwhichisproducedbyM1NIMOSdevicessimulatingsoftwareBasedontheanalyticalmodelof2Delectricfield，forthemoment，themodelingofJ。(x，y)wasobtainedbyusingstreamfunctionequ

9、ationsFinallyweusetheconceptionof“l(fā)uckyelectron’’inordertoobtain2Ddistributingmodelofemissioncurrentandgatecurrentthroughthegained2DcurrentdensitydistributionnlodelKEYWORDS：deepsubmicronNMOS，gatecurrentmodeling，Gausstheo